Substitutional Carbon in Ge and Si1-xGex. |
| Journal |
Materials Science Forum (Volumes 258 - 263) |
| Volume |
Defects in Semiconductors 19 |
| Edited by |
Gordon Davies and Maria Helena Nazaré |
| Pages |
97-102 |
| DOI |
10.4028/www.scientific.net/MSF.258-263.97 |
| Citation |
L. Hoffmann et al., 1997, Materials Science Forum, 258-263, 97 |
| Authors |
L. Hoffmann, J.C. Bach, J. Lundsgaard Hansen, Arne Nylandsted Larsen, Brian Bech Nielsen, P. Leary, R. Jones, Sven Öberg |
| Keywords |
Ab Initio Calculations, Carbon, Ge, Ion-Channeling, IR-Spectroscopy, Si1-xGex |
| Full Paper |
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