Defects in Thick Epitaxial GaAs Layers |
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| Journal | Materials Science Forum (Volumes 258 - 263) |
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| Volume | Defects in Semiconductors 19 |
| Edited by | Gordon Davies and Maria Helena Nazaré |
| Pages | 997-1002 |
| DOI | 10.4028/www.scientific.net/MSF.258-263.997 |
| Citation | H. Samie et al., 1997, Materials Science Forum, 258-263, 997 |
| Authors | H. Samie, J.C. Bourgoin |
| Keywords | EL2, GaAs, Growth, Hall-Effect, IR Absorption, Luminescence, SIMS, VPE |
| Full Paper | 
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