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Defects in Semiconductors 19

Materials Science Forum Volumes 258 - 263

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• p1749 Defect Formation and Electronic Transport at AlGaN/GaN Interfaces   [ 307 K ]
  Authors: L. Hsu, W. Walukiewicz, Eugene E. Haller
• p1755 Characterization of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al₂O₃(0001) Studied by TEM   [ 443 K ]
  Authors: S. Kaiser, Herbert Preis, Oliver Ambacher, W. Gebhardt
• p1761 Formation Kinetics of the Al-Related Shallow Thermal Donors: A Probe for Oxygen Diffusion in Silicon   [ 435 K ]
  Authors: P. Kaczor, L. Dobaczewski, T. Gregorkiewicz, C.A.J. Ammerlaan
• p1767 Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium   [ 195 K ]
  Authors: Lyudmila I. Khirunenko, V.I. Shakhovtsov, V.V. Shumov
• p1773 The Influence of Isovalent Doping on Diffusion of Interstitial Oxygen in Silicon   [ 136 K ]
  Authors: Lyudmila I. Khirunenko, Yu.V. Pomozov, V.I. Shakhovtsov, V.V. Shumov
• p1777 EPR Evidence of Hydrogen-Enhanced Diffusion of Aluminum in Silicon   [ 306 K ]
  Authors: Yu.V. Gorelkinskii, B.N. Mukashev, H.P. Zeindl
• p1783 Segregation of Gold at Dislocations Confirmed by Gold Diffusion into Highly Dislocated Silicon   [ 373 K ]
  Authors: Hartmut Bracht, A. Rodriguez Schachtrup, Ichiro Yonenaga
• p1789 Annealing of Low-Temperature Substitutional Gold in Silicon: Ring-Diffusion of Substitutional Gold in Silicon   [ 223 K ]
  Authors: Masami Morooka
• p1795 Rate Limiting Mechanism of Transition Metal Gettering in Multicrystalline Silicon   [ 345 K ]
  Authors: Scott A. McHugo, A.C. Thompson, Masayuki Imaizumi, H. Hieslmair, Eicke R. Weber
• p1801 Intrinsic Point Defect Engineering in Silicon High-Voltage Power Device Technology   [ 351 K ]
  Authors: N.A. Sobolev
• p1807 Influence of the Dislocation Loops on the Anomalous Diffusion of Fe Implanted into InP   [ 416 K ]
  Authors: C. Frigeri, A. Carnera, B. Fraboni, A. Gasparotto, F. Priolo, A. Camporese, G. Rossetto
• p1813 Lithium Induced Vacancy Formation and its Effect on the Diffusivity of Lithium in Gallium Arsenide   [ 546 K ]
  Authors: H.P. Gislason, K. Leosson, H. Svavarsson, Kimmo Saarinen, A. Mari
• p1821 Ab-Initio Investigations on Diffusion of Halogen Atoms in GaAs   [ 375 K ]
  Authors: Takahisa Ohno, Taizo Sasaki, Akihito Taguchi
• p1827 Low Temperature Intrinsic Diffusion Coefficient of Lithium in GaAs   [ 277 K ]
  Authors: K. Leosson, H.P. Gislason
• p1833 Low Temperature Impurity Diffusion into Large-Band-Gap Semiconductors   [ 211 K ]
  Authors: N.T. Bagraev, A.A. Gippius, L.E. Klyachkin, A.M. Malyarenko