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Defects in Semiconductors 19

Materials Science Forum Volumes 258 - 263

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• p565 Electrical and Optical Characterisation of Defects Induced in Epitaxially Grown n-Si During 1 keV Noble Gas Ion Bombardment   [ 401 K ]
  Authors: Prakash N.K. Deenapanray, F. Danie Auret, G. Myburg, W.E. Meyer, S.A. Goodman
• p571 Fano Resonance in a Vibronic Sideband in Silicon   [ 152 K ]
  Authors: Joanne Gower, Gordon Davies, Edward C. Lightowlers
• p575 Frenkel Pairs and Impurity-Defect Interactions in p-Type Silicon Irradiated with Fast Electrons and Gamma-Rays at Low Temperatures   [ 399 K ]
  Authors: Valentin V. Emtsev, U. Dedek, Peter Ehrhart, P.D. Kervalishvili, M.A. Margaryan, D.S. Poloskin, Holger Zillgen
• p581 Impurity-Vacancy Complexes Formed by Electron Irradiation of Czochralski Silicon   [ 202 K ]
  Authors: V. Avalos, S. Dannefaer
• p587 Luminescence Centers in High-Energy Ion-Implanted Silicon   [ 367 K ]
  Authors: Koichi Terashima, Taeko Ikarashi, Masahito Watanabe, Tomohisa Kitano
• p593 Performance Degradation of Microcrystalline Silicon-Based p-i-n Detectors Upon He⁴ Irradiation   [ 236 K ]
  Authors: R. Schwarz, M. Vieira, F. Maçarico, S. Koynov, S. Cardoso, J.C. Soares
• p599 Persistent Excited Conductivity Induced by Proton Irradiation in a-Si:H   [ 339 K ]
  Authors: H. Amekura, N. Kishimoto, K. Kono
• p605 Photoluminescence Centers Associated with Noble-Gas Impurities in Silicon   [ 359 K ]
  Authors: Stefan Estreicher, Joerg Weber
• p611 Implantation of Reactive and Unreactive Ions in Silicon   [ 200 K ]
  Authors: J.R. Brucato, G.A. Baratta, G. Compagnini, G. Strazzulla
• p617 Photoluminescence Vibrational Spectroscopy of Defects Containing the Light Impurities Carbon and Oxygen in Silicon   [ 374 K ]
  Authors: Edward C. Lightowlers, A.N. Safonov
• p623 Raman Scattering Measurements in Neutron-Irradiated Silicon   [ 241 K ]
  Authors: Michèle Coeck, Christiane Laermans, R. Provoost, R.E. Silverans
• p629 Recombination Centers in Electron Irradiated Si and GaAs   [ 223 K ]
  Authors: J.C. Bourgoin, M. Zazoui, M.A. Zaidi
• p635 Study of a Li- and C-Related Center Formed at High Annealing Temperatures in Neutron-Irradiated FZ Silicon Doped with Li   [ 340 K ]
  Authors: F. Rodriguez, Gordon Davies, Edward C. Lightowlers
• p641 The Influence of Accumulated Defects on the Lateral Spread of Implanted Ions   [ 388 K ]
  Authors: S.T. Nakagawa
• p647 Structural Change and Relaxation Processes of Tetrahedral Point Defects   [ 298 K ]
  Authors: El-Maghraby Mohamed, Yuzo Shinozuka