Silicon Carbide, III-Nitrides and Related Materials
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Authors: Valeri F. Tsvetkov, R.C. Glass, D. Henshall, D. Asbury, Calvin H. Carter Jr. |
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High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor Transport Authors: G. Augustine, H. McD. Hobgood, Vijay Balakrishna, Greg Dunne, R.H. Hopkins, R.N. Thomas, W.A. Doolittle, A. Rohatgi |
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Sublimation Growth of 50mm Diameter SiC Wafers Authors: Adrian R. Powell, Shao Ping Wang, G. Fechko, George R. Brandes |
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Experimental Investigation of 4H-SiC Bulk Crystal Growth Authors: K. Chourou, Mikhail Anikin, Jean Marie Bluet, V. Lauer, Gérard Guillot, Jean Camassel, Sandrine Juillaguet, O. Chaix-Pluchery, Michel Pons, R. Pons |
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Step Structures and Structural Defects in Bulk SiC Crystals Grown by Sublimation Method Authors: Atsuto Okamoto, Naohiro Sugiyama, Toshihiko Tani, Nobuo Kamiya |
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Influence of the Growth Direction and Polytype on the Stacking Fault Generation in α-SiC Authors: J. Takahashi, Noboru Ohtani, Masakazu Katsuno, S. Shinoyama |
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X-Ray Section Topographic Investigation of the Growth Process of SiC Crystals Authors: S. Milita, R. Pons, J. Baruchel, A. Mazuelas |
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Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals Authors: Stephan G. Müller, Robert Eckstein, Wolfgang Hartung, Dieter Hofmann, M. Kölbl, Gerhard Pensl, Erwin Schmitt, Arnd Dietrich Weber, Albrecht Winnacker |
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