Silicon Carbide, III-Nitrides and Related Materials
Materials Science Forum Volumes 264 - 268
doi:10.4028/www.scientific.net/MSF.264-268
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p4
Sponsors and Committees
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28 K
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p7
Preface
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21 K
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p3
SiC Seeded Boule Growth
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576 K
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Authors: Valeri F. Tsvetkov, R.C. Glass, D. Henshall, Calvin H. Carter Jr., D. Asbury
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p9
High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor Transport
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201 K
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Authors: G. Augustine, H. McD. Hobgood, Vijay Balakrishna, Greg Dunne, R.H. Hopkins, R.N. Thomas, W.A. Doolittle, A. Rohatgi
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p13
Sublimation Growth of 50mm Diameter SiC Wafers
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303 K
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Authors: Adrian R. Powell, Shao Ping Wang, G. Fechko, George R. Brandes
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p17
Experimental Investigation of 4H-SiC Bulk Crystal Growth
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257 K
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Authors: K. Chourou, Mikhail Anikin, Jean Marie Bluet, V. Lauer, Gérard Guillot, Jean Camassel, Sandrine Juillaguet, O. Chaix-Pluchery, Michel Pons, R. Pons
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p21
Step Structures and Structural Defects in Bulk SiC Crystals Grown by Sublimation Method
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346 K
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Authors: Atsuto Okamoto, Naohiro Sugiyama, Toshihiko Tani, Nobuo Kamiya
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p25
Influence of the Growth Direction and Polytype on the Stacking Fault Generation in α-SiC
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319 K
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Authors: J. Takahashi, Noboru Ohtani, Masakazu Katsuno, S. Shinoyama
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p29
X-Ray Section Topographic Investigation of the Growth Process of SiC Crystals
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428 K
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Authors: S. Milita, R. Pons, J. Baruchel, A. Mazuelas
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p33
Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals
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349 K
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Authors: Stephan G. Müller, Robert Eckstein, Wolfgang Hartung, Dieter Hofmann, M. Kölbl, Gerhard Pensl, Erwin Schmitt, Arnd Dietrich Weber, Albrecht Winnacker
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p37
The Structural Evolution of Seed Surfaces During the Initial Stages of Physical Vapor Transport SiC Growth
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311 K
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Authors: V.D. Heydemann, Gregory S. Rohrer, Edward M. Sanchez, Marek Skowronski
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p41
Defect Formation Mechanism of Bulk SiC
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287 K
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Authors: Makato Sasaki, Y. Nishio, Shigehiro Nishino, Shinichi Nakashima, Hiroshi Harima
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p45
Enlargement of SiC Crystals: Defect Formation at the Interfaces
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378 K
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Authors: Mikhail Anikin, Michel Pons, K. Chourou, O. Chaix-Pluchery, Jean Marie Bluet, V. Lauer, R. Pons
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p49
Impurity Incorporation During Sublimation Bulk Crystal Growth of 6H- and 4H-SiC
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260 K
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Authors: Noboru Ohtani, Masakazu Katsuno, J. Takahashi, Hirokatsu Yashiro, M. Kanaya, S. Shinoyama
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p53
Optically Transparent 6H-Silicon Carbide
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321 K
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Authors: Andrey Bakin, Sergey I. Dorozhkin, A.S. Zubrilov, N.I. Kuznetsov, Yuri M. Tairov