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Silicon Carbide, III-Nitrides and Related Materials

Materials Science Forum Volumes 264 - 268

• Papers
• Abstracts

• p4 Sponsors and Committees   [ 28 K ]
• p7 Preface   [ 21 K ]
• p3 SiC Seeded Boule Growth   [ 576 K ]
  Authors: Valeri F. Tsvetkov, R.C. Glass, D. Henshall, Calvin H. Carter Jr., D. Asbury
• p9 High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor Transport   [ 201 K ]
  Authors: G. Augustine, H. McD. Hobgood, Vijay Balakrishna, Greg Dunne, R.H. Hopkins, R.N. Thomas, W.A. Doolittle, A. Rohatgi
• p13 Sublimation Growth of 50mm Diameter SiC Wafers   [ 303 K ]
  Authors: Adrian R. Powell, Shao Ping Wang, G. Fechko, George R. Brandes
• p17 Experimental Investigation of 4H-SiC Bulk Crystal Growth   [ 257 K ]
  Authors: K. Chourou, Mikhail Anikin, Jean Marie Bluet, V. Lauer, Gérard Guillot, Jean Camassel, Sandrine Juillaguet, O. Chaix-Pluchery, Michel Pons, R. Pons
• p21 Step Structures and Structural Defects in Bulk SiC Crystals Grown by Sublimation Method   [ 346 K ]
  Authors: Atsuto Okamoto, Naohiro Sugiyama, Toshihiko Tani, Nobuo Kamiya
• p25 Influence of the Growth Direction and Polytype on the Stacking Fault Generation in α-SiC   [ 319 K ]
  Authors: J. Takahashi, Noboru Ohtani, Masakazu Katsuno, S. Shinoyama
• p29 X-Ray Section Topographic Investigation of the Growth Process of SiC Crystals   [ 428 K ]
  Authors: S. Milita, R. Pons, J. Baruchel, A. Mazuelas
• p33 Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals   [ 349 K ]
  Authors: Stephan G. Müller, Robert Eckstein, Wolfgang Hartung, Dieter Hofmann, M. Kölbl, Gerhard Pensl, Erwin Schmitt, Arnd Dietrich Weber, Albrecht Winnacker
• p37 The Structural Evolution of Seed Surfaces During the Initial Stages of Physical Vapor Transport SiC Growth   [ 311 K ]
  Authors: V.D. Heydemann, Gregory S. Rohrer, Edward M. Sanchez, Marek Skowronski
• p41 Defect Formation Mechanism of Bulk SiC   [ 287 K ]
  Authors: Makato Sasaki, Y. Nishio, Shigehiro Nishino, Shinichi Nakashima, Hiroshi Harima
• p45 Enlargement of SiC Crystals: Defect Formation at the Interfaces   [ 378 K ]
  Authors: Mikhail Anikin, Michel Pons, K. Chourou, O. Chaix-Pluchery, Jean Marie Bluet, V. Lauer, R. Pons
• p49 Impurity Incorporation During Sublimation Bulk Crystal Growth of 6H- and 4H-SiC   [ 260 K ]
  Authors: Noboru Ohtani, Masakazu Katsuno, J. Takahashi, Hirokatsu Yashiro, M. Kanaya, S. Shinoyama
• p53 Optically Transparent 6H-Silicon Carbide   [ 321 K ]
  Authors: Andrey Bakin, Sergey I. Dorozhkin, A.S. Zubrilov, N.I. Kuznetsov, Yuri M. Tairov