Paper Title:
Dependence of Channel Mobility on the Surface Step in Orientation in Planar 6H-SiC MOSFETs
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
1001-1004
DOI
10.4028/www.scientific.net/MSF.264-268.1001
Citation
S. Scharnholz, E. Stein von Kamienski, A. Gölz, C. Leonhard, H. Kurz, "Dependence of Channel Mobility on the Surface Step in Orientation in Planar 6H-SiC MOSFETs", Materials Science Forum, Vols. 264-268, pp. 1001-1004, 1998
Online since
February 1998
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