Dependence of Channel Mobility on the Surface Step in Orientation in Planar 6H-SiC MOSFETs |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
1001-1004 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.1001 |
| Citation |
Sigo Scharnholz et al., 1998, Materials Science Forum, 264-268, 1001 |
| Online since |
February, 1998 |
| Authors |
Sigo Scharnholz, E. Stein von Kamienski, A. Gölz, C. Leonhard, H. Kurz |
| Keywords |
Channel-Mobility, Interface Roughness, Interface States (or Traps), Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Off-Axis Orientation |
| Full Paper |
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