Paper Title:
High-Voltage (2.6 kV) Lateral DMOSFETs in 4H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
1005-1008
DOI
10.4028/www.scientific.net/MSF.264-268.1005
Citation
J. Spitz, M.R. Melloch, J. A. Cooper, M. A. Capano, "High-Voltage (2.6 kV) Lateral DMOSFETs in 4H-SiC", Materials Science Forum, Vols. 264-268, pp. 1005-1008, 1998
Online since
February 1998
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Price
$32.00
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