Paper Title:
Impact Ionization in 6H-SiC MOSFETs
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
1009-1012
DOI
10.4028/www.scientific.net/MSF.264-268.1009
Citation
E. Bano, T. Ouisse, S. Scharnholz, A. Gölz, "Impact Ionization in 6H-SiC MOSFETs", Materials Science Forum, Vols. 264-268, pp. 1009-1012, 1998
Online since
February 1998
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Price
$32.00
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