Paper Title:
Generation Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-Rays
  Abstract

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Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
1017-1020
DOI
10.4028/www.scientific.net/MSF.264-268.1017
Citation
M. Yoshikawa, K. Saitoh, T. Ohshima, H. Itoh, I. Nashiyama, Y. Takahashi, K. Ohnishi, H. Okumura, S. Yoshida, "Generation Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-Rays", Materials Science Forum, Vols. 264-268, pp. 1017-1020, 1998
Online since
February 1998
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