Paper Title:
Differences between Interfacial Bonding Chemistry at SiC-SiO2 Interfaces Prepared by Low-Temperature Remote Plasma-Assisted Oxidation and High Temperature Conventional Thermal Oxidation
  Abstract

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Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
1021-1024
DOI
10.4028/www.scientific.net/MSF.264-268.1021
Citation
G. Lucovsky, H. Niimi, "Differences between Interfacial Bonding Chemistry at SiC-SiO2 Interfaces Prepared by Low-Temperature Remote Plasma-Assisted Oxidation and High Temperature Conventional Thermal Oxidation", Materials Science Forum, Vols. 264-268, pp. 1021-1024, 1998
Online since
February 1998
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Price
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