Paper Title:
Fast Generation-Recombination Channels due to Epitaxial Defects in SiC Metal-Oxide-Semiconductor Devices
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
1025-1028
DOI
10.4028/www.scientific.net/MSF.264-268.1025
Citation
A. O. Konstantinov, Q. Wahab, C. Hallin, C. I. Harris, B. Pécz, "Fast Generation-Recombination Channels due to Epitaxial Defects in SiC Metal-Oxide-Semiconductor Devices", Materials Science Forum, Vols. 264-268, pp. 1025-1028, 1998
Online since
February 1998
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Price
$32.00
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