Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
103-106 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.103 |
| Citation |
Alexsandre Ellison et al., 1998, Materials Science Forum, 264-268, 103 |
| Online since |
February, 1998 |
| Authors |
Alexsandre Ellison, Tsunenobu Kimoto, Ivan G. Ivanov, Qamar-ul Wahab, Anne Henry, Olof Kordina, Jian Hui Zhang, Carl G. Hemmingsson, Chun-Yuan Gu, M.R. Leys, Erik Janzén |
| Keywords |
Deep Level, High Temperature CVD, Schottky Device, Shallow Dopants |
| Full Paper |
Get the full paper by clicking here
|
