Paper Title:
Computer Model Simulation of SiC Diode Reverse-Bias Instabilities due to Deep Energy Impurity Levels
  Abstract

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Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
1033-1036
DOI
10.4028/www.scientific.net/MSF.264-268.1033
Citation
R.P. Joshi, C. Fazi, "Computer Model Simulation of SiC Diode Reverse-Bias Instabilities due to Deep Energy Impurity Levels", Materials Science Forum, Vols. 264-268, pp. 1033-1036, 1998
Online since
February 1998
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Price
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