Paper Title:
Nanosecond Risetime Pulse Characterization of SiC p+n Junction Diode Breakdown and Switching Properties
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
1037-1040
DOI
10.4028/www.scientific.net/MSF.264-268.1037
Citation
P. G. Neudeck, C. Fazi, "Nanosecond Risetime Pulse Characterization of SiC p+n Junction Diode Breakdown and Switching Properties", Materials Science Forum, Vols. 264-268, pp. 1037-1040, 1998
Online since
February 1998
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Price
$32.00
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