Paper Title:
Comparison between Aluminium and Boron-Doped Junction Termination Extensions for High Voltage 6H-SiC Planar Bipolar Diodes
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
1045-1048
DOI
10.4028/www.scientific.net/MSF.264-268.1045
Citation
S. Ortolland, M. L. Locatelli, D. Planson, J.-P. Chante, A. Senes, "Comparison between Aluminium and Boron-Doped Junction Termination Extensions for High Voltage 6H-SiC Planar Bipolar Diodes", Materials Science Forum, Vols. 264-268, pp. 1045-1048, 1998
Online since
February 1998
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Price
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