Paper Title:
Investigation of Excess Carrier Distributions in 4H-SiC Power Diodes under Static Conditions and Turn-On
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
1053-1056
DOI
10.4028/www.scientific.net/MSF.264-268.1053
Citation
O. Tornblad, A. Galeckas, J. Linnros, B. Breitholtz, U. Lindefelt, "Investigation of Excess Carrier Distributions in 4H-SiC Power Diodes under Static Conditions and Turn-On", Materials Science Forum, Vols. 264-268, pp. 1053-1056, 1998
Online since
February 1998
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Price
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