4H-SiC Gate Turn-Off (GTO) Thyristor Development |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
1069-1072 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.1069 |
| Citation |
Jeff B. Casady et al., 1998, Materials Science Forum, 264-268, 1069 |
| Online since |
February, 1998 |
| Authors |
Jeff B. Casady, Anant K. Agarwal, L.B. Rowland, R.R. Siergiej, S. Seshadri, S. Mani, J. Barrows, D. Piccone, P.A. Sanger, C.D. Brandt |
| Keywords |
GTO's, High Temperature, Power Electronics, Power Switching, Rectifiers, Thyristor |
| Full Paper |
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