Paper Title:
4H-SiC Gate Turn-Off (GTO) Thyristor Development
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
1069-1072
DOI
10.4028/www.scientific.net/MSF.264-268.1069
Citation
J. B. Casady, A. K. Agarwal, L.B. Rowland, R.R. Siergiej, S. Seshadri, S. Mani, J. Barrows, D. Piccone, P.A. Sanger, C.D. Brandt, "4H-SiC Gate Turn-Off (GTO) Thyristor Development", Materials Science Forum, Vols. 264-268, pp. 1069-1072, 1998
Online since
February 1998
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Price
$32.00
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