Paper Title:
Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
107-110
DOI
10.4028/www.scientific.net/MSF.264-268.107
Citation
O. Kordina, K. G. Irvine, J. J. Sumakeris, H.S. Kong, M. J. Paisley, C. H. Carter Jr., "Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition", Materials Science Forum, Vols. 264-268, pp. 107-110, 1998
Online since
February 1998
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Price
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