Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
107-110 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.107 |
| Citation |
Olof Kordina et al., 1998, Materials Science Forum, 264-268, 107 |
| Online since |
February, 1998 |
| Authors |
Olof Kordina, Kenneth G. Irvine, Joseph J. Sumakeris, H.S. Kong, Michael J. Paisley, Calvin H. Carter Jr. |
| Keywords |
Chemical Vapor Deposition (CVD), Doping Uniformity, Hot-Wall CVD, Reproducibility, Thick Layers, Thickness Uniformity |
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