Paper Title:

Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition

Periodical Materials Science Forum (Volumes 264 - 268)
Main Theme Silicon Carbide, III-Nitrides and Related Materials
Edited by G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages 107-110
DOI 10.4028/www.scientific.net/MSF.264-268.107
Citation Olof Kordina et al., 1998, Materials Science Forum, 264-268, 107
Online since February, 1998
Authors Olof Kordina, Kenneth G. Irvine, Joseph J. Sumakeris, H.S. Kong, Michael J. Paisley, Calvin H. Carter Jr.
Keywords Chemical Vapor Deposition (CVD), Doping Uniformity, Hot-Wall CVD, Reproducibility, Thick Layers, Thickness Uniformity
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