Paper Title:
High Temperature Performance of Implanted-Gate n-Channel JFETs in 6H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
1077-1080
DOI
10.4028/www.scientific.net/MSF.264-268.1077
Citation
S.T. Sheppard, V. Lauer, W. Wondrak, E. Niemann, "High Temperature Performance of Implanted-Gate n-Channel JFETs in 6H-SiC", Materials Science Forum, Vols. 264-268, pp. 1077-1080, 1998
Online since
February 1998
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Price
$32.00
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