Paper Title:
Electrical Characteristics of a Novel Gate Structure 4H-SiC Power Static Induction Transistor
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
1085-1088
DOI
10.4028/www.scientific.net/MSF.264-268.1085
Citation
T. Iwasaki, T. Oono, K. Asano, Y. Sugawara, T. Yatsuo, "Electrical Characteristics of a Novel Gate Structure 4H-SiC Power Static Induction Transistor", Materials Science Forum, Vols. 264-268, pp. 1085-1088, 1998
Online since
February 1998
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Price
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