Growth of Bulk GaN by Sublimation Method |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
1107-1110 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.1107 |
| Citation |
S. Sakai et al., 1998, Materials Science Forum, 264-268, 1107 |
| Online since |
February, 1998 |
| Authors |
S. Sakai, H. Sato, T. Sugahara, Y. Naoi, S. Kurai, Kenya Yamashita, S. Tottori, M. Hao, Keiji Wada, Shigehiro Nishino |
| Keywords |
Bulk GaN, Dislocation, Homoepitaxy, Substrate |
| Full Paper |
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