Impurity Incorporation Mechanism in Step-Controlled Epitaxy Growth Temperature and Substrate Off-Angle Dependence |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
111-114 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.111 |
| Citation |
T. Yamamoto et al., 1998, Materials Science Forum, 264-268, 111 |
| Online since |
February, 1998 |
| Authors |
T. Yamamoto, Tsunenobu Kimoto, Hiroyuki Matsunami |
| Keywords |
(112O) Substrate, C/Si Ratio, Growth Temperature, Impurity Incorporation, Off-Angle, SIMS Depth Profile, Step-Controlled Epitaxy, Surface Polarity, Thermal Desorption |
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