Heteroepitaxy of Group III Nitrides for Device Applications |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
1115-1120 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.1115 |
| Citation |
Hiroshi Amano et al., 1998, Materials Science Forum, 264-268, 1115 |
| Online since |
February, 1998 |
| Authors |
Hiroshi Amano, T. Takeuchi, Hiroshi Sakai, S. Yamaguchi, C. Wetzel, Isamu Akasaki |
| Keywords |
Buffer Layer, Gallium Nitride (GaN), Grazing Incidence X-Ray Diffraction, In Situ Transmission Electron Microscope (TEM), Strain and Relaxation |
| Full Paper |
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