Paper Title:
Epitaxial Growth of GaN on Silicon Substrates by Low-Pressure MOCVD using AlAs, AlAs/GaAs, and AIN Buffer Layers
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
1145-1148
DOI
10.4028/www.scientific.net/MSF.264-268.1145
Citation
A. Strittmatter, A. Krost, K. Schatke, Y. Iseri, J. Bläsing, J. Christen, "Epitaxial Growth of GaN on Silicon Substrates by Low-Pressure MOCVD using AlAs, AlAs/GaAs, and AIN Buffer Layers", Materials Science Forum, Vols. 264-268, pp. 1145-1148, 1998
Online since
February 1998
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Price
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