Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiC |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
115-118 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.115 |
| Citation |
L.B. Rowland et al., 1998, Materials Science Forum, 264-268, 115 |
| Online since |
February, 1998 |
| Authors |
L.B. Rowland, Albert A. Burk, C.D. Brandt |
| Keywords |
Doping, Epitaxial Growth, Nitrogen, Vapor-Phase Epitaxy (VPE) |
| Full Paper |
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