Paper Title:
Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
115-118
DOI
10.4028/www.scientific.net/MSF.264-268.115
Citation
L.B. Rowland, A. A. Burk, C.D. Brandt, "Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiC", Materials Science Forum, Vols. 264-268, pp. 115-118, 1998
Online since
February 1998
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.