Paper Title:
MOCVD Growth and Properties of InGaN/GaN Multi-Quantum Wells
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
1157-1160
DOI
10.4028/www.scientific.net/MSF.264-268.1157
Citation
S. Keller, F. Cabané, M.S. Minsky, X. H. Wu, M.P. Mack, J. S. Speck, E. Hu, L.A. Coldren, U. K. Mishra, S. P. DenBaars, "MOCVD Growth and Properties of InGaN/GaN Multi-Quantum Wells", Materials Science Forum, Vols. 264-268, pp. 1157-1160, 1998
Online since
February 1998
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Price
$32.00
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