Paper Title:
Growth of AIN on 6H- and 4H-SiC by Gas-Source Molecular Beam Epitaxy
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
1181-1184
DOI
10.4028/www.scientific.net/MSF.264-268.1181
Citation
K. Järrendahl, S.A. Smith, T.S. Zheleva, R.S. Kern, R. F. Davis, "Growth of AIN on 6H- and 4H-SiC by Gas-Source Molecular Beam Epitaxy", Materials Science Forum, Vols. 264-268, pp. 1181-1184, 1998
Online since
February 1998
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Price
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