Growth and Characterization of High Quality Epitaxial GaN on ZnO(0001) by Reactive Molecular Epitaxy |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
1201-1204 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.1201 |
| Citation |
F. Hamdani et al., 1998, Materials Science Forum, 264-268, 1201 |
| Online since |
February, 1998 |
| Authors |
F. Hamdani, M. Yeadon, David John Smith, H. Tang, W. Kim, A. Salvador, A.E. Botchkarev, J. Murray Gibson, Hadis Morkoç |
| Keywords |
Atomic Force Microscope (AFM), Photoluminescence (PL), Reflectivity, Surface Polarity, TEM, Zinc Oxide ZnO |
| Full Paper |
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