Paper Title:
STM Observation of Initial Nitridation Process of Ga on Si Substrates
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
1209-1212
DOI
10.4028/www.scientific.net/MSF.264-268.1209
Citation
Y. Nakada, H. Okumura, "STM Observation of Initial Nitridation Process of Ga on Si Substrates", Materials Science Forum, Vols. 264-268, pp. 1209-1212, 1998
Online since
February 1998
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.