Paper Title:
Nitridation of GaAs(100) Wafers for the Preparation of Zincblende-Structure Thick GaN Layers
  Abstract

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Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
1213-1216
DOI
10.4028/www.scientific.net/MSF.264-268.1213
Citation
A. Yamamoto, T. Shin-ya, Y. Yamauchi, A. Hashimoto, "Nitridation of GaAs(100) Wafers for the Preparation of Zincblende-Structure Thick GaN Layers", Materials Science Forum, Vols. 264-268, pp. 1213-1216, 1998
Online since
February 1998
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Price
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