Paper Title:
MBE Growth of Device-Quality Cubic GaN on Atomically Flat (001) GaAs Prepared by Atomic-Hydrogen Treatment at High Temperatures
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
1221-1224
DOI
10.4028/www.scientific.net/MSF.264-268.1221
Citation
A. Yoshikawa , Z. X. Qin, H. Nagano, Y. Sugure, A.W. Jia, M. Kobayashi, Y. Kato, K. Takahashi, "MBE Growth of Device-Quality Cubic GaN on Atomically Flat (001) GaAs Prepared by Atomic-Hydrogen Treatment at High Temperatures", Materials Science Forum, Vols. 264-268, pp. 1221-1224, 1998
Online since
February 1998
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Price
$35.00
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