Paper Title:
Surface Defects in GaN and AlxGa1-xN Epilayers Deposited on Sapphire by Organometallic Vapor Phase Epitaxy
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
1251-1254
DOI
10.4028/www.scientific.net/MSF.264-268.1251
Citation
M. C. Shin, A.Y. Polyakov, M. Skowronski, G. S. Rohrer, R.G. Wilson, "Surface Defects in GaN and AlxGa1-xN Epilayers Deposited on Sapphire by Organometallic Vapor Phase Epitaxy", Materials Science Forum, Vols. 264-268, pp. 1251-1254, 1998
Online since
February 1998
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Price
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