Homoepitaxial Growth of 4H- and 6H-SiC in a Commercial Horizontal LPCVD Reactor |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
127-130 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.127 |
| Citation |
Frank Wischmeyer et al., 1998, Materials Science Forum, 264-268, 127 |
| Online since |
February, 1998 |
| Authors |
Frank Wischmeyer, D. Leidich, E. Niemann |
| Keywords |
Atomic Force Microscope (AFM), Chemical Vapor Deposition (CVD), Electrical Characterisation, Homoepitaxy |
| Full Paper |
Get the full paper by clicking here
|
