Paper Title:
Homoepitaxial Growth of 4H- and 6H-SiC in a Commercial Horizontal LPCVD Reactor
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
127-130
DOI
10.4028/www.scientific.net/MSF.264-268.127
Citation
F. Wischmeyer, D. Leidich, E. Niemann, "Homoepitaxial Growth of 4H- and 6H-SiC in a Commercial Horizontal LPCVD Reactor", Materials Science Forum, Vols. 264-268, pp. 127-130, 1998
Online since
February 1998
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