Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
1291-1294 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.1291 |
| Citation |
J. Holst et al., 1998, Materials Science Forum, 264-268, 1291 |
| Online since |
February, 1998 |
| Authors |
J. Holst, M. Straßburg, N.N. Ledentsov, L. Eckey, A. Göldner, Andreas Hoffmann, T. Hempel, D. Rudloff, F. Bertram, J. Christen, A.V. Sakharov, M.V. Maximov, A.S. Usikov, W.V. Lundin, B.V. Pushnyi, Z.I. Alferov |
| Keywords |
Domain Boundaries, Double Heterostructure, High Impact Polystyrene (HIPS), Stimulated Emission |
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