Optical Properties of Cubic Phase GaN Epilayers Grown by Molecular Beam Epytaxy on SiC/Silicon (100) Substrates |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
1343-1346 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.1343 |
| Citation |
M. Godlewski et al., 1998, Materials Science Forum, 264-268, 1343 |
| Online since |
February, 1998 |
| Authors |
M. Godlewski, V.Yu. Ivanov, J. Peber Bergman, Bo Monemar, A. Barski, R. Langer |
| Keywords |
Cubic Phase GaN, Photoluminescence (PL), Shallow Acceptors |
| Full Paper |
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