Planar 6H-SiC p-n Junctions Prepared by Selective Epitaxial Growth |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
135-138 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.135 |
| Citation |
Kai Christiansen et al., 1998, Materials Science Forum, 264-268, 135 |
| Online since |
February, 1998 |
| Authors |
Kai Christiansen, T. Dalibor, Reinhard Helbig, S. Christiansen, Horst P. Strunk |
| Keywords |
Chemical Vapor Deposition (CVD), Planar p-n Junction, Selective Epitaxial Growth, TEM |
| Full Paper |
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