Paper Title:
Characterization of GaN Epilayers Grown on Sapphire and SiC Substrates
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
1355-1358
DOI
10.4028/www.scientific.net/MSF.264-268.1355
Citation
N. Wieser, M. Klose, F. Scholz, J. Off, Y. Dutrieux, "Characterization of GaN Epilayers Grown on Sapphire and SiC Substrates", Materials Science Forum, Vols. 264-268, pp. 1355-1358, 1998
Online since
February 1998
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Price
$32.00
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