Electrical Characterization of Dopants and Deep Level Defects for III-V Nitrides Grown by Metalorganic Chemical Vapor Deposition |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
1375-1380 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.1375 |
| Citation |
W. Götz et al., 1998, Materials Science Forum, 264-268, 1375 |
| Online since |
February, 1998 |
| Authors |
W. Götz, N.M. Johnson |
| Keywords |
Acceptor, Deep Level, DLTS, Donors, Hall-Effect, Hydrogen, Magnesium, MOCVD, Silicon |
| Full Paper |
Get the full paper by clicking here
|
