Paper Title:
Electrical Characterization of Dopants and Deep Level Defects for III-V Nitrides Grown by Metalorganic Chemical Vapor Deposition
  Abstract

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Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
1375-1380
DOI
10.4028/www.scientific.net/MSF.264-268.1375
Citation
W. Götz, N.M. Johnson, "Electrical Characterization of Dopants and Deep Level Defects for III-V Nitrides Grown by Metalorganic Chemical Vapor Deposition", Materials Science Forum, Vols. 264-268, pp. 1375-1380, 1998
Online since
February 1998
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