A Two-Band Analysis of Electrical Transport in n-Type GaN Epilayers |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
1385-1388 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.1385 |
| Citation |
M.G. Cheong et al., 1998, Materials Science Forum, 264-268, 1385 |
| Online since |
February, 1998 |
| Authors |
M.G. Cheong, Kyung Sik Oh, Eun Kyung Suh, H.J. Lee |
| Keywords |
Electron Scattering, Hall Scattering Factor, Impurity Band Conduction, Mobility |
| Full Paper |
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