Epitaxial Growth of SiC on α-SiC Using Si2Cl6+C3H8+H2 System |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
139-142 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.139 |
| Citation |
Shigehiro Nishino et al., 1998, Materials Science Forum, 264-268, 139 |
| Online since |
February, 1998 |
| Authors |
Shigehiro Nishino, Toshiyuki Miyanagi, Y. Nishio |
| Keywords |
Chemical Vapor Deposition (CVD), Homoepitaxy, Photoluminescence (PL), Si2Cl6 (Hexachlorodisilane), Site Competition, Surface Morphology, Titanium (Ti) |
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