Paper Title:
Epitaxial Growth of SiC on α-SiC Using Si2Cl6+C3H8+H2 System
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
139-142
DOI
10.4028/www.scientific.net/MSF.264-268.139
Citation
S. Nishino, T. Miyanagi, Y. Nishio, "Epitaxial Growth of SiC on α-SiC Using Si2Cl6+C3H8+H2 System", Materials Science Forum, Vols. 264-268, pp. 139-142, 1998
Online since
February 1998
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Price
$32.00
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