Paper Title:
Electrical Characteristics of In Situ Grown Lateral P +N GaN Junction Diodes on Sapphire Substrates
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
1415-1420
DOI
10.4028/www.scientific.net/MSF.264-268.1415
Citation
J. B. Fedison, T. P. Chow, H. Lu, I. Bhat, "Electrical Characteristics of In Situ Grown Lateral P +N GaN Junction Diodes on Sapphire Substrates", Materials Science Forum, Vols. 264-268, pp. 1415-1420, 1998
Online since
February 1998
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.