Blue-U.V. Homojunction GaN LEDs Fabricated by MOVPE |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
1425-1428 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.1425 |
| Citation |
B. Beaumont et al., 1998, Materials Science Forum, 264-268, 1425 |
| Online since |
February, 1998 |
| Authors |
B. Beaumont, F. Calle, S. Haffouz, Eva Monroy, Mathieu Leroux, Enrique Calleja, P. Lorenzini, Elias Muñoz Merino, Pierre Gibart |
| Keywords |
Deep States, Light-Emitting Diode (LED), p-Type Doping |
| Full Paper |
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