High Growth Rate of α-SiC by Sublimation Epitaxy |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
143-146 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.143 |
| Citation |
Mikael Syväjärvi et al., 1998, Materials Science Forum, 264-268, 143 |
| Online since |
February, 1998 |
| Authors |
Mikael Syväjärvi, Rositza Yakimova, Mike F. MacMillan, M. Tuominen, A. Kakanakova-Georgieva, Carl G. Hemmingsson, Ivan G. Ivanov, Erik Janzén |
| Keywords |
Epitaxy, Growth Mechanisms, Growth Rate, Morphology, Sublimation |
| Full Paper |
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