Paper Title:
Substrate Bias Effects in AlGaN/GaN Doped Channel Heterostructure Field Effect Transistors Grown on Doped SiC Substrates
  Abstract

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Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
1445-1448
DOI
10.4028/www.scientific.net/MSF.264-268.1445
Citation
R. Gaska, M. S. Shur, J.W. Yang, A. Osinsky, A.O. Orlov, G.L. Snider, "Substrate Bias Effects in AlGaN/GaN Doped Channel Heterostructure Field Effect Transistors Grown on Doped SiC Substrates", Materials Science Forum, Vols. 264-268, pp. 1445-1448, 1998
Online since
February 1998
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Price
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