Paper Title:
Epitaxy of High Quality SiC Layers by CST
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
155-158
DOI
10.4028/www.scientific.net/MSF.264-268.155
Citation
T. Yoshida, Y. Nishio, S.K. Lilov, S. Nishino, "Epitaxy of High Quality SiC Layers by CST", Materials Science Forum, Vols. 264-268, pp. 155-158, 1998
Online since
February 1998
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.