Paper Title:

Experimental Investigation of 4H-SiC Bulk Crystal Growth

Periodical Materials Science Forum (Volumes 264 - 268)
Main Theme Silicon Carbide, III-Nitrides and Related Materials
Edited by G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages 17-20
DOI 10.4028/www.scientific.net/MSF.264-268.17
Citation K. Chourou et al., 1998, Materials Science Forum, 264-268, 17
Online since February, 1998
Authors K. Chourou, Mikhail Anikin, Jean Marie Bluet, V. Lauer, Gérard Guillot, Jean Camassel, Sandrine Juillaguet, O. Chaix-Pluchery, Michel Pons, R. Pons
Keywords Micro Raman, Polytypism, Sublimation Growth, Wide Band Gap Semiconductor
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