Experimental Investigation of 4H-SiC Bulk Crystal Growth |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
17-20 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.17 |
| Citation |
K. Chourou et al., 1998, Materials Science Forum, 264-268, 17 |
| Online since |
February, 1998 |
| Authors |
K. Chourou, Mikhail Anikin, Jean Marie Bluet, V. Lauer, Gérard Guillot, Jean Camassel, Sandrine Juillaguet, O. Chaix-Pluchery, Michel Pons, R. Pons |
| Keywords |
Micro Raman, Polytypism, Sublimation Growth, Wide-Band Gap Semiconductor |
| Full Paper |
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