Paper Title:
Epitaxial Growth in 3C-SiC without Carbonization Process Using 1,3-Disilabutane
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
175-178
DOI
10.4028/www.scientific.net/MSF.264-268.175
Citation
K. W. Lee, K.-S. Yu, J. W. Bae, Y. Kim, "Epitaxial Growth in 3C-SiC without Carbonization Process Using 1,3-Disilabutane", Materials Science Forum, Vols. 264-268, pp. 175-178, 1998
Online since
February 1998
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Price
$35.00
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