Paper Title:
CVD Growth Mechanism of 3C-SiC on Si Substrates
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
183-186
DOI
10.4028/www.scientific.net/MSF.264-268.183
Citation
Y. Ishida, T. Takahashi, H. Okumura, S. Yoshida, T. Sekigawa, "CVD Growth Mechanism of 3C-SiC on Si Substrates", Materials Science Forum, Vols. 264-268, pp. 183-186, 1998
Online since
February 1998
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Price
$32.00
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