Paper Title:
The Mechanism of Void Formation in the Growth of 3C-SiC Thin Film on Si Substrate
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
199-202
DOI
10.4028/www.scientific.net/MSF.264-268.199
Citation
Y.H. Seo, K.C. Kim, H.W. Shim, K. S. Nahm, E. K. Suh, H.J. Lee, Y.G. Hwang, D.-K. Kim, B. T. Lee, "The Mechanism of Void Formation in the Growth of 3C-SiC Thin Film on Si Substrate", Materials Science Forum, Vols. 264-268, pp. 199-202, 1998
Online since
February 1998
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Price
$32.00
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