Paper Title:
Study of Initial Stage of SiC Growth on Si(100) Surface by XPS, RHEED and SEM
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
203-206
DOI
10.4028/www.scientific.net/MSF.264-268.203
Citation
T. Takaoka, H. Saito, Y. Igari, I. Kusunoki, "Study of Initial Stage of SiC Growth on Si(100) Surface by XPS, RHEED and SEM", Materials Science Forum, Vols. 264-268, pp. 203-206, 1998
Online since
February 1998
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Price
$32.00
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